Publications(成果)
研究成果へのリンク
以下は、毛利研究室発足後の業績をまとめたものです。
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K. Ishiji, R. Sugie, S. Mouri, T. Araki, T. Fujii, and T. Iwamoto,
“Influence of Implantation and Annealing Temperatures on Electrical Property of Low-Dose Implanted/Annealed SiC,”
Journal of Applied Physics 140, 055703 (2026).
DOI: 10.1063/5.0341213. -
K. A. Shafin, M. A. H. Pappu, A. T. Abir, A. Kuddus, S. Mouri, and J. Hossain,
“Machine Learning-Aided Modeling and Absorption Optimization in Stacked-Absorber Heterojunction Solar Cells,”
Journal of Physics D: Applied Physics 59, 155103 (2026).
DOI: 10.1088/1361-6463/ae571c. -
C. Ghosh, P. K. Biswas, A. Kuddus, S. Mouri, and A. B. Md. Ismail,
“Green Transformation of River Sand into Silica Toward Wastewater Treatment: A Dual-Impact Strategy for Environmental Conservation,”
Journal of the Asia-Japan Research Institute of Ritsumeikan University 7, 81–100 (2025). -
T. Ahmed, S. N. Shiddique, A. Kuddus, M. Hossain, S. Mouri, and J. Hossain,
“Design and Analysis of Inorganic Tandem Architecture with Synergistically Optimized BaSnS₃ Top and AgTaS₃ Bottom Perovskite Sub-Cells,”
Solar Energy 284, 113111 (2024).
DOI: 10.1016/j.solener.2024.113111. -
K. Rong, K. Shinokita, P. Yu, T. Endo, T. Araki, Y. Miyata, K. Matsuda, and S. Mouri,
“Heavy Electron Doping in Monolayer MoS₂ on a Freestanding N-Face GaN Substrate,”
Applied Physics Express 17(11), 115002 (2024).
DOI: 10.35848/1882-0786/ad8c9b. -
K. Rong, R. Noro, H. Nishigaki, M. Ding, Y. Yao, T. Inoue, R. Katayama, Y. Kobayashi, K. Matsuda, and S. Mouri,
“Far-Reaching Remote Doping for Monolayer MoS₂ Using a Ferroelectric Substrate: Unveiling the Impact of h-BN Spacer Thickness,”
ACS Applied Electronic Materials 6, 5914–5922 (2024).
DOI: 10.1021/acsaelm.4c00880. -
S. Mouri and T. Araki,
「原子層モアレ超格子系におけるフォノン物性制御」
応用物理 93(3), 174–177 (2024).
DOI: 10.11470/oubutsu.93.3_174.
※解説論文 -
A. Kuddus, S. K. Mostaque, S. Mouri, and J. Hossain,
“Emerging II–VI Wide Bandgap Semiconductor Device Technologies,”
Physica Scripta 99(2), 022001 (2024).
DOI: 10.1088/1402-4896/ad1858. -
T. Nakamoto, K. Matsuyama, M. Sakai, C.-T. Chen, Y.-L. Cheuch, S. Mouri, T. Yoshimura, N. Fujimura, and D. Kiriya,
“Selective Isolation of Mono- to Quadlayered 2D Materials via Sonication-Assisted Micromechanical Exfoliation,”
ACS Nano 18(3), 2455–2463 (2024).
DOI: 10.1021/acsnano.3c11099. -
T. Araki, M. Deura, T. Fujii, S. Mouri, et al.,
「分子線エピタキシ法を用いた窒化物半導体結晶成長の最前線」
応用物理 92(10), 622–626 (2023).
※総説・解説 -
N. Mokutani, M. Deura, S. Mouri, K. Shojiki, S. Xiao, H. Miyake, and T. Araki,
“Control of Metal-Rich Growth for GaN/AlN Superlattice Fabrication on Face-to-Face-Annealed Sputter-Deposited AlN Templates,”
physica status solidi (b) 260, 2300061 (2023).
DOI: 10.1002/pssb.202300061. -
Y. Wada, M. Deura, Y. Kuroda, N. Goto, S. Kayamoto, T. Fujii, S. Mouri, and T. Araki,
“Substrate Terrace Width Dependence of Direct Growth of GaN on ScAlMgO₄ by Radio-Frequency Molecular Beam Epitaxy,”
physica status solidi (b) 260, 2300029 (2023).
DOI: 10.1002/pssb.202300029. -
T. Araki, S. Kayamoto, Y. Wada, Y. Kuroda, D. Nakayama, N. Goto, M. Deura, S. Mouri, T. Fujii, T. Fukuda, Y. Shiraishi, and R. Sugie,
“Direct Growth of GaN Film on ScAlMgO₄ Substrate by Radio-Frequency Plasma-Excited Molecular Beam Epitaxy,”
Applied Physics Express 16, 025504 (2023). -
T. Araki, F. Bin Abas, N. Goto, R. Fujita, S. Mouri, et al.,
“Nitrogen Radical Beam Irradiation on InN Film for Surface Modification,”
Journal of the Society of Materials Science, Japan 71(10), 824–829 (2022).
DOI: 10.2472/jsms.71.824. -
R. Moriya, J. Kikawa, S. Mouri, T. Shinohe, S. Xiao, H. Miyake, and T. Araki,
“Cathodoluminescence Study of m-Plane α-Ga₂O₃ Grown by Mist Chemical Vapor Deposition,”
physica status solidi (b) 259, 2100598 (2022).
DOI: 10.1002/pssb.202100598. -
T. Araki, F. Bin Abas, R. Fujita, and S. Mouri,
“Repeatability and Mechanisms of Threading Dislocation Reduction in InN Film Grown with In Situ Surface Modification by Radical Beam Irradiation,”
Journal of the Society of Materials Science, Japan 70(10), 732–737 (2021).
DOI: 10.2472/jsms.70.732.
必要なら次に、「査読付き原著論文のみ」に絞って、2026→2021の順で番号を振り直した正式な業績リストにします。
下です。
-
K. Ishiji, R. Sugie, S. Mouri, T. Araki, T. Fujii, and T. Iwamoto,
“Influence of Implantation and Annealing Temperatures on Electrical Property of Low-Dose Implanted/Annealed SiC,”
Journal of Applied Physics 140, 055703 (2026).
DOI: 10.1063/5.0341213. -
K. A. Shafin, M. A. H. Pappu, A. T. Abir, A. Kuddus, S. Mouri, and J. Hossain,
“Machine Learning-Aided Modeling and Absorption Optimization in Stacked-Absorber Heterojunction Solar Cells,”
Journal of Physics D: Applied Physics 59, 155103 (2026).
DOI: 10.1088/1361-6463/ae571c. -
C. Ghosh, P. K. Biswas, A. Kuddus, S. Mouri, and A. B. Md. Ismail,
“Green Transformation of River Sand into Silica Toward Wastewater Treatment: A Dual-Impact Strategy for Environmental Conservation,”
Journal of the Asia-Japan Research Institute of Ritsumeikan University 7, 81–100 (2025). -
T. Ahmed, S. N. Shiddique, A. Kuddus, M. Hossain, S. Mouri, and J. Hossain,
“Design and Analysis of Inorganic Tandem Architecture with Synergistically Optimized BaSnS₃ Top and AgTaS₃ Bottom Perovskite Sub-Cells,”
Solar Energy 284, 113111 (2024).
DOI: 10.1016/j.solener.2024.113111. -
K. Rong, K. Shinokita, P. Yu, T. Endo, T. Araki, Y. Miyata, K. Matsuda, and S. Mouri,
“Heavy Electron Doping in Monolayer MoS₂ on a Freestanding N-Face GaN Substrate,”
Applied Physics Express 17(11), 115002 (2024).
DOI: 10.35848/1882-0786/ad8c9b. -
K. Rong, R. Noro, H. Nishigaki, M. Ding, Y. Yao, T. Inoue, R. Katayama, Y. Kobayashi, K. Matsuda, and S. Mouri,
“Far-Reaching Remote Doping for Monolayer MoS₂ Using a Ferroelectric Substrate: Unveiling the Impact of h-BN Spacer Thickness,”
ACS Applied Electronic Materials 6, 5914–5922 (2024).
DOI: 10.1021/acsaelm.4c00880. -
S. Mouri and T. Araki,
「原子層モアレ超格子系におけるフォノン物性制御」
応用物理 93(3), 174–177 (2024).
DOI: 10.11470/oubutsu.93.3_174.
※解説論文 -
A. Kuddus, S. K. Mostaque, S. Mouri, and J. Hossain,
“Emerging II–VI Wide Bandgap Semiconductor Device Technologies,”
Physica Scripta 99(2), 022001 (2024).
DOI: 10.1088/1402-4896/ad1858. -
T. Nakamoto, K. Matsuyama, M. Sakai, C.-T. Chen, Y.-L. Cheuch, S. Mouri, T. Yoshimura, N. Fujimura, and D. Kiriya,
“Selective Isolation of Mono- to Quadlayered 2D Materials via Sonication-Assisted Micromechanical Exfoliation,”
ACS Nano 18(3), 2455–2463 (2024).
DOI: 10.1021/acsnano.3c11099. -
T. Araki, M. Deura, T. Fujii, S. Mouri, et al.,
「分子線エピタキシ法を用いた窒化物半導体結晶成長の最前線」
応用物理 92(10), 622–626 (2023).
※総説・解説 -
N. Mokutani, M. Deura, S. Mouri, K. Shojiki, S. Xiao, H. Miyake, and T. Araki,
“Control of Metal-Rich Growth for GaN/AlN Superlattice Fabrication on Face-to-Face-Annealed Sputter-Deposited AlN Templates,”
physica status solidi (b) 260, 2300061 (2023).
DOI: 10.1002/pssb.202300061. -
Y. Wada, M. Deura, Y. Kuroda, N. Goto, S. Kayamoto, T. Fujii, S. Mouri, and T. Araki,
“Substrate Terrace Width Dependence of Direct Growth of GaN on ScAlMgO₄ by Radio-Frequency Molecular Beam Epitaxy,”
physica status solidi (b) 260, 2300029 (2023).
DOI: 10.1002/pssb.202300029. -
T. Araki, S. Kayamoto, Y. Wada, Y. Kuroda, D. Nakayama, N. Goto, M. Deura, S. Mouri, T. Fujii, T. Fukuda, Y. Shiraishi, and R. Sugie,
“Direct Growth of GaN Film on ScAlMgO₄ Substrate by Radio-Frequency Plasma-Excited Molecular Beam Epitaxy,”
Applied Physics Express 16, 025504 (2023). -
T. Araki, F. Bin Abas, N. Goto, R. Fujita, S. Mouri, et al.,
“Nitrogen Radical Beam Irradiation on InN Film for Surface Modification,”
Journal of the Society of Materials Science, Japan 71(10), 824–829 (2022).
DOI: 10.2472/jsms.71.824. -
R. Moriya, J. Kikawa, S. Mouri, T. Shinohe, S. Xiao, H. Miyake, and T. Araki,
“Cathodoluminescence Study of m-Plane α-Ga₂O₃ Grown by Mist Chemical Vapor Deposition,”
physica status solidi (b) 259, 2100598 (2022).
DOI: 10.1002/pssb.202100598. -
T. Araki, F. Bin Abas, R. Fujita, and S. Mouri,
“Repeatability and Mechanisms of Threading Dislocation Reduction in InN Film Grown with In Situ Surface Modification by Radical Beam Irradiation,”
Journal of the Society of Materials Science, Japan 70(10), 732–737 (2021).
DOI: 10.2472/jsms.70.732.
必要なら次に、「査読付き原著論文のみ」に絞って、2026→2021の順で番号を振り直した正式な業績リストにします。
グループ主宰者の代表的な研究成果
2009年までの成果は学生時（京大田中研）、2011~2018年は主に京大エネ研松田研、2016~2020までの成果は立命館大荒木研での成果になります。
【主著】
[1] Shinichiro Mouri, Kazunari Matsuda , Yasushi Nanishi , Tsutomu Araki
“Thermal Conductivity of van der Waals Hetero-bilayer MoS2/MoSe2”
Appl. Phys. Exp. 13, 075001 (2020).
[2] Shinichiro Mouri, Wenjin Zhang, Daichi Kozawa, Yuhei Miyauchi, Goki Eda and Kazunari Matsuda,
“Thermal Dissociation of Thermal Dissociation of Inter-layer Excitons in MoS2/MoSe2 Hetero-bilayers” Nanoscale 9, 6674 (2017).
[3]Shinichiro Mouri, Yuhei Miyauchi, and Kazunari Matsuda,
“Chemical Doping Modulation of Nonlinear Photoluminescence Properties in Monolayer MoS2”
Appl. Phys. Exp. 9, 055202 (2016).
[4]Shinichiro Mouri, Yuhei Miyauchi, Mingling Toh, Weijie Zhao, Goki Eda, and Kazunari Matsuda,
“Nonlinear photoluminescence in atomically thin layered WSe2 arising from diffusion-assisted exciton–exciton annihilation” Phys. Rev. B 90, 15449 (2014).
[5] Shinichiro Mouri, Yuhei Miyauchi, and Kazunari Matsuda,
“Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping”
Nano Lett. 13, 5964 (2013).
(引用回数が800回を超えており、web of science の高被引用文献となっています）
[6] Shinichiro Mouri, Koichito Tanaka, Sebastien Bonhommeau, Nawel Ould Moussa, Gabor Molnár, Azzedine Bousseksou
“Relaxation process from photo-induced states of double step spin crossover systems using kinetic Ising-like model including intra-site coupling”
Phys. Rev. B 78, 174308 (2008).
【共著】
[1]Ukyo. Ooe, Faizulsalihin Bin Abas, Shinichiro Mouri, Yasushi Nanishi, Tsutomu Araki,
“Metal-Covered van der Waals Epitaxy of Gallium Nitride Films on Graphitic Substrates by ECR-MBE”
Jpn. J. Appl. Phys. 58, SC1053 (2019).
[2]Yuhei Miyauchi, Satoru Konabe, Feijiu Wang, Wenjin Zhang, Alexander Hwang, Yuusuke Hasegawa, Lizhong Zhou, Shinichiro Mouri, Mingling Toh, Goki Eda and Kazunari Matsuda,
“Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors”,
Nat. Commu. 9, 2598 (2018).
[3]Daichi Kozawa, Alexandra Carvalho, Ivan Verzhbitskiy, Francesco Giustiniano, Yuhei Miyauchi, Shinichiro Mouri, A. H. Castro Neto, Kazunari Matsuda, and Goki Eda,
“Evidence for Fast Interlyaer Energy Transfer in MoSe2/WS2 Hetero- structures”
Nano Lett. 16, 5944 (2016).
[4] Syun Aota, Naoto Akizuki, Shinichiro Mouri, Kazunari Matsuda, and Yuhei Miyauchi
“Efficient near-infrared up-conversion photoluminescence in carbon nanotubes”
Nat. Commun. 6, 8920 (2015).
[5]Feijiu Wang, Daichi Kozawa, Yuhei Miyauchi, Kazushi Hiraoka, Shinichiro Mouri, Yutaka Ohno, and Kazunari Matsuda,
“Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers”
Nat. Commun. 6, 6305 (2015).
[6]Yuka Tsuboi, Feijiu Wang, Daichi Kozawa, Kazuma Funahashi, Shinichiro Mouri, Yuhei Miyauchi, Taishi Takenobu, and Kazunari Matsuda,
“Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS2 thin film”
Nanoscale, 7, 14476 (2015).
[7]Yuhei Miyauchi, Munechiyo Iwamura, Shinichiro Mouri, Tadashi Kawazoe, Motoichi Ohtsu, and Kazunari Matsuda,
“Brightening of excitons in carbon nanotubes on dimensionality modification”
Nat. Photonics 7, 715 (2013).
[8]Nawel Ould Moussa, Gabor Molnár, Sebastien Bonhommeau, A.Zwick, Shinichiro Mouri, Koichiro Tanaka, José Antonio Real, Azzedine Bousseksou,
“Selective Photoswitching of the Binuclear Spin Crossover Compound {[Fe(bt)(NCS)2]2(bpm)} into Two Distinct Macroscopic Phases”
Phys. Rev. Lett. 94, 107205 (2005).